STMicroelectronics STL N channel-Channel Power MOSFET, 268 A, 60 V Enhancement, 8-Pin PowerFLAT STL270N6LF7
- RS Stock No.:
- 719-657
- Mfr. Part No.:
- STL270N6LF7
- Manufacturer:
- STMicroelectronics
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TWD68.00
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TWD71.40
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | TWD68.00 |
| 10 - 24 | TWD59.00 |
| 25 - 99 | TWD53.00 |
| 100 - 499 | TWD46.00 |
| 500 + | TWD43.00 |
*price indicative
- RS Stock No.:
- 719-657
- Mfr. Part No.:
- STL270N6LF7
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 268A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 187W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 268A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 187W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 1mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS(th)
Related links
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