DiodesZetex DMN3023L N-Channel MOSFET, 6.2 A, 30 V Enhancement, 3-Pin SOT-23 DMN3023L-7
- RS Stock No.:
- 718-542
- Mfr. Part No.:
- DMN3023L-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
TWD12,600.00
(exc. GST)
TWD13,230.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from January 18, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | TWD4.20 | TWD12,600.00 |
*price indicative
- RS Stock No.:
- 718-542
- Mfr. Part No.:
- DMN3023L-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN3023L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 18.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 2.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN3023L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 18.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Width 2.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. Its Advanced structure minimises on-state resistance, making it Ideal for a variety of applications where power efficiency is paramount. With excellent switching capabilities and minimal gate threshold voltage, this MOSFET offers reliable performance in both consumer and industrial electronic devices. The product is compliant with RoHS and features ESD protection, ensuring safety and longevity in various operating conditions.
Low on resistance of 25mΩ at VGS = 10V for reduced power loss
Low gate threshold voltage enhances compatibility with low-voltage control signals
Fast switching speed supports high-frequency applications effectively
ESD protected gate ensures device reliability under dynamic conditions
Totally lead-free and fully RoHS compliant for environmental safety
Halogen and antimony-free, contributing to its classification as a 'Green' device
Qualified to AEC-Q101 standards, ensuring high reliability for automotive applications
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