DiodesZetex DMN63D8L N-Channel MOSFET, 400 mA, 30 V Enhancement, 3-Pin SOT-23 DMN63D8L-7
- RS Stock No.:
- 718-536
- Mfr. Part No.:
- DMN63D8L-7
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD10.00
(exc. GST)
TWD10.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,990 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | TWD2.00 | TWD10.00 |
| 125 - 495 | TWD1.80 | TWD9.00 |
| 500 - 2495 | TWD1.60 | TWD8.00 |
| 2500 + | TWD1.40 | TWD7.00 |
*price indicative
- RS Stock No.:
- 718-536
- Mfr. Part No.:
- DMN63D8L-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN63D8L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 520mW | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.5mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN63D8L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 520mW | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.5mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high-efficiency power management applications. This versatile component prioritises minimal on-state resistance while ensuring superior switching performance. Ideal for applications such as motor control, power management functions, and backlighting, this MOSFET offers a reliable and efficient solution to handle demanding power requirements. With a robust construction compliant with AEC-Q101 standards, it is also classified as a ’Green’ device, underscoring its environmentally friendly credentials. Its Compact SOT23 package facilitates space-efficient placements in various electronics.
Achieves Low on resistance, ensuring high efficiency in power management
Boasts low input capacitance for fast switching speeds, enhancing overall performance
Handles a maximum drain-source voltage of 30V, making it versatile for various applications
Offers continuous drain currents up to 350mA at 25°C, supporting reliable operation in demanding scenarios
Designed with ESD protection on the gate to safeguard the device and enhance longevity
Complies with RoHS and is free from lead, halogen, and antimony, supporting environmentally-friendly manufacturing
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