ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB
- RS Stock No.:
- 687-450
- Mfr. Part No.:
- RH7G04CBKFRATCB
- Manufacturer:
- ROHM
N
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Bulk discount available
Subtotal (1 tape of 2 units)*
TWD66.00
(exc. GST)
TWD69.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 96 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD33.00 | TWD66.00 |
| 20 - 48 | TWD29.00 | TWD58.00 |
| 50 - 198 | TWD26.00 | TWD52.00 |
| 200 - 998 | TWD25.00 | TWD50.00 |
| 1000 + | TWD24.50 | TWD49.00 |
*price indicative
- RS Stock No.:
- 687-450
- Mfr. Part No.:
- RH7G04CBKFRATCB
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN3333T8LSAB | |
| Series | RH7G04CBKFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 19.1nC | |
| Maximum Power Dissipation Pd | 62W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN3333T8LSAB | ||
Series RH7G04CBKFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 19.1nC | ||
Maximum Power Dissipation Pd 62W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel Power MOSFET designed to operate efficiently in demanding applications. With a maximum drain-source voltage of 40V and a continuous drain current capability of up to 40A, this component excels in power switching and amplification tasks. Its low on-state resistance of 5.0 mΩ ensures minimal power loss during operation, making it ideal for both automotive and industrial applications. AEC-Q101 qualified, this device provides reliable performance with 100% avalanche testing, ensuring safety and durability in various operating conditions.
Designed for high efficiency with low on-state resistance, reducing heat generation
AEC Q101 qualified, ensuring reliability for automotive standards
100% avalanche tested for enhanced safety under transient conditions
Continuous drain current capability of up to 40A for demanding applications
Operating junction temperature range from -55 to +175°C for versatile usage
Suitable for applications in ADAS, lighting, and body electronics
Complies with strict quality control measures for dependable performance
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