ROHM RJ1N04BBHT N-Channel Single MOSFETs, 100 A, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- RS Stock No.:
- 687-400
- Mfr. Part No.:
- RJ1N04BBHTL1
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD139.00
(exc. GST)
TWD145.96
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 100 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD69.50 | TWD139.00 |
| 20 - 98 | TWD61.00 | TWD122.00 |
| 100 - 198 | TWD55.00 | TWD110.00 |
| 200 + | TWD43.00 | TWD86.00 |
*price indicative
- RS Stock No.:
- 687-400
- Mfr. Part No.:
- RJ1N04BBHTL1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263AB-3LSHYAD | |
| Series | RJ1N04BBHT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.77mm | |
| Standards/Approvals | RoHS | |
| Width | 10.36mm | |
| Length | 15.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263AB-3LSHYAD | ||
Series RJ1N04BBHT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Height 4.77mm | ||
Standards/Approvals RoHS | ||
Width 10.36mm | ||
Length 15.5mm | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET designed to deliver outstanding efficiency in demanding applications. With a maximal drain-source voltage of 80V and a continuous drain current of 100A, it is tailored for effective switching tasks in a variety of circuits, making it ideal for motor drives and DC/DC converters. Its low on-resistance of 5.3mΩ ensures that energy loss is minimised, resulting in better thermal management and reliable operation under high-power conditions. Compliant with RoHS standards, this device not only meets environmental requirements but also assures high reliability and safety for end-users in diverse electronics.
Low on resistance for effective power management and reduced thermal load
Capable of handling continuous drain currents of ±100A, ideal for high-performance designs
Comprehensive testing for robustness, including 100% Rg and UIS testing
Pb free plating ensures compliance with international environmental standards
Halogen-free construction contributes to environmental sustainability
Robust packaging specifications, including embossed tape for dependable transport and storage
Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments
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