ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR
- RS Stock No.:
- 687-387
- Mfr. Part No.:
- RF9P120BKFRATCR
- Manufacturer:
- ROHM
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View bulk pricing optionSubtotal (1 tape of 2 units)*
TWD44.00
(exc. GST)
TWD46.20
(inc. GST)
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- Shipping from October 09, 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD22.00 | TWD44.00 |
| 20 - 48 | TWD19.50 | TWD39.00 |
| 50 - 198 | TWD17.50 | TWD35.00 |
| 200 - 998 | TWD14.00 | TWD28.00 |
| 1000 + | TWD13.50 | TWD27.00 |
*price indicative
- RS Stock No.:
- 687-387
- Mfr. Part No.:
- RF9P120BKFRATCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RF9P120BKFRA | |
| Package Type | DFN2020Y7LSAA | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.65mm | |
| Standards/Approvals | RoHS | |
| Length | 2.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RF9P120BKFRA | ||
Package Type DFN2020Y7LSAA | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Operating Temperature 150°C | ||
Height 0.65mm | ||
Standards/Approvals RoHS | ||
Length 2.1mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for efficient switching in various applications including automotive, lighting, and body electronics. Engineered to support a robust continuous drain current of ±12A and a maximum Drain-Source voltage of 100V, this component excels in environments demanding reliability and efficiency. Its advanced design features low on-resistance and high power density, ensuring optimal performance while complying with AEC-Q101 standards and RoHS regulations. The compact DFN2020Y7LSAA package further allows easy integration into space-constrained designs, making it a versatile choice for modern electronic solutions.
AEC Q101 qualified for automotive applications, ensuring reliability
Low on resistance (RDS(on)), enhancing efficiency during operation
Supports a Drain-Source voltage of 100V suitable for high-voltage applications
Continuous drain current of ±12A, capable of handling demanding loads
Disposes of Pb free plating, ensuring compliance with environmental standards
Halogen free, contributing to eco-friendly product design
High power density with a maximum power dissipation of 23W, optimising thermal performance
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