onsemi NVM Type N-Channel Single MOSFETs, 233 A, 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D1N04XMT1G
- RS Stock No.:
- 648-512
- Mfr. Part No.:
- NVMFWS1D1N04XMT1G
- Manufacturer:
- onsemi
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 5 units)*
TWD332.00
(exc. GST)
TWD348.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,450 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD66.40 | TWD332.00 |
| 50 - 245 | TWD41.20 | TWD206.00 |
| 250 - 495 | TWD23.80 | TWD119.00 |
| 500 + | TWD23.20 | TWD116.00 |
*price indicative
- RS Stock No.:
- 648-512
- Mfr. Part No.:
- NVMFWS1D1N04XMT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 233A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFNW-5 | |
| Series | NVM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 49.3nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6 mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 233A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFNW-5 | ||
Series NVM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 49.3nC | ||
Maximum Operating Temperature 175°C | ||
Width 6 mm | ||
Length 5mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
RoHS Compliant
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