onsemi NTM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS4D7N04XMT1G
- RS Stock No.:
- 648-507
- Mfr. Part No.:
- NTMFS4D7N04XMT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD298.00
(exc. GST)
TWD312.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from December 28, 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD29.80 | TWD298.00 |
| 100 - 490 | TWD18.40 | TWD184.00 |
| 500 - 990 | TWD10.70 | TWD107.00 |
| 1000 + | TWD10.40 | TWD104.00 |
*price indicative
- RS Stock No.:
- 648-507
- Mfr. Part No.:
- NTMFS4D7N04XMT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best in class On Resistance for motor driver application. Lower On Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Latest 40V standard gate level power MOSFET technology
Lower On resistance
Lower gate charge
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