Microchip DN2625 N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin TO-252 DN2625K4-G

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Subtotal (1 reel of 2000 units)*

TWD90,000.00

(exc. GST)

TWD94,500.00

(inc. GST)

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Per Reel*
2000 +TWD45.00TWD90,000.00

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RS Stock No.:
598-727
Mfr. Part No.:
DN2625K4-G
Manufacturer:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Series

DN2625

Mount Type

Surface

Pin Count

3

Channel Mode

Depletion

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Very low gate threshold voltage

Designed to be source driven

Low switching losses

Low effective output capacitance

Designed for inductive loads

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