Microchip VN2460 N-Channel Single MOSFETs, 250 mA, 600 V Enhancement, 3-Pin SOT-89 VN2460N8-G
- RS Stock No.:
- 598-312
- Mfr. Part No.:
- VN2460N8-G
- Manufacturer:
- Microchip
Subtotal (1 reel of 2000 units)*
TWD71,400.00
(exc. GST)
TWD74,960.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | TWD35.70 | TWD71,400.00 |
*price indicative
- RS Stock No.:
- 598-312
- Mfr. Part No.:
- VN2460N8-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-89 | |
| Series | VN2460 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Width | 2.6mm | |
| Length | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-89 | ||
Series VN2460 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Width 2.6mm | ||
Length 4.6mm | ||
Automotive Standard No | ||
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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