STMicroelectronics N-Channel STripFET F7 Type N-Channel MOSFET, 545 A, 60 V Enhancement, 8-Pin TO-LL
- RS Stock No.:
- 558-986
- Mfr. Part No.:
- STO450N6F7
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
TWD194.00
(exc. GST)
TWD203.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 270 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD194.00 |
| 10 - 49 | TWD157.00 |
| 50 - 99 | TWD121.00 |
| 100 + | TWD107.00 |
*price indicative
- RS Stock No.:
- 558-986
- Mfr. Part No.:
- STO450N6F7
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 545A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET F7 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Standards/Approvals | ECOPACK | |
| Width | 10.1 mm | |
| Length | 10.58mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 545A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET F7 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Standards/Approvals ECOPACK | ||
Width 10.1 mm | ||
Length 10.58mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhance trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDSon on the market
Excellent FoM
High avalanche ruggedness
Related links
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