Infineon HEXFET Type N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF
- RS Stock No.:
- 495-562
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD115.00
(exc. GST)
TWD120.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 1,253 unit(s) ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 12 | TWD115.00 |
| 13 - 24 | TWD113.00 |
| 25 + | TWD107.00 |
*price indicative
- RS Stock No.:
- 495-562
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF
Features & Benefits
Applications
What is the temperature range for optimal operation?
How does the gate threshold voltage affect performance?
Can it handle high pulsed currents?
What are the thermal management requirements?
Is it compatible with various mounting configurations?
Related links
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247 IRFP4229PBF
