Infineon IMZC120 N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1
- RS Stock No.:
- 351-922
- Mfr. Part No.:
- IMZC120R012M2HXKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD1,427.00
(exc. GST)
TWD1,498.35
(inc. GST)
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In Stock
- 200 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD1,427.00 |
| 10 - 99 | TWD1,284.00 |
| 100 + | TWD1,185.00 |
*price indicative
- RS Stock No.:
- 351-922
- Mfr. Part No.:
- IMZC120R012M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Infineon IMZC120 Series MOSFET, 1200V Maximum Drain Source Voltage, 91A Maximum Continuous Drain Current - IMZC120R012M2HXKSA1
This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in demanding environments. It is intended for through-hole mounting and suits applications needing robust drain-to-source voltage capability and substantial continuous current handling while operating across wide temperature ranges.
Features and Benefits:
• 1200V drain tolerance enables high-voltage switching
• 91A continuous drain current supports heavy load handling
• 12mΩ Rds(on) reduces conduction losses during operation
• 480W maximum dissipation allows sustained power handling
• 124nC typical gate charge balances switching speed and drive effort
• Through-hole 4-pin PG-TO-247-4-U07 package simplifies heatsinking
• 91A continuous drain current supports heavy load handling
• 12mΩ Rds(on) reduces conduction losses during operation
• 480W maximum dissipation allows sustained power handling
• 124nC typical gate charge balances switching speed and drive effort
• Through-hole 4-pin PG-TO-247-4-U07 package simplifies heatsinking
Applications
• Suitable for industrial high-voltage inverters
• Ideal for power supplies in telecoms equipment
• Used with motor drives requiring high-current switching
• Can be used for high-voltage DC-DC conversion modules
• Appropriate for laboratory power testing rigs
• Ideal for power supplies in telecoms equipment
• Used with motor drives requiring high-current switching
• Can be used for high-voltage DC-DC conversion modules
• Appropriate for laboratory power testing rigs
What gate-drive considerations should I account for?
Expect a typical gate charge of 124nC at rated Vgs, so design gate drivers capable of sourcing and sinking sufficient peak currents to meet desired switching transitions without excessive delay.
How does thermal management impact uptime at full load?
With a maximum power dissipation of 480W, effective heatsinking and thermal-interface design are necessary to maintain junction temperature within limits during prolonged high-power operation.
Are there restrictions on ambient operating temperature?
The device is specified to operate from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments when appropriate thermal design is applied.
Which mounting method is required for optimal performance?
It is intended for through-hole assembly in the PG-TO-247-4-U07 4-pin format, allowing direct attachment to a heat sink or chassis for improved thermal conduction.
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