Infineon IPF N-Channel Power Transistor, 207 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1
- RS Stock No.:
- 349-405
- Mfr. Part No.:
- IPF031N13NM6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD447.00
(exc. GST)
TWD469.36
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | TWD223.50 | TWD447.00 |
| 20 - 198 | TWD201.00 | TWD402.00 |
| 200 - 998 | TWD185.50 | TWD371.00 |
| 1000 - 1998 | TWD172.00 | TWD344.00 |
| 2000 + | TWD154.00 | TWD308.00 |
*price indicative
- RS Stock No.:
- 349-405
- Mfr. Part No.:
- IPF031N13NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 207A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, MSL1 J-STD-020, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 207A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, MSL1 J-STD-020, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for motor drives and battery powered applications
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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