Infineon IMLT N-Channel MOSFET, 142 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1
- RS Stock No.:
- 349-047
- Mfr. Part No.:
- IMLT65R015M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD955.00
(exc. GST)
TWD1,002.75
(inc. GST)
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- Shipping from October 27, 2027
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Units | Per unit |
|---|---|
| 1 - 9 | TWD955.00 |
| 10 - 99 | TWD859.00 |
| 100 + | TWD792.00 |
*price indicative
- RS Stock No.:
- 349-047
- Mfr. Part No.:
- IMLT65R015M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IMLT | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 600W | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IMLT | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 600W | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IMLT Series MOSFET, 650V Drain-Source Voltage, 142A Continuous Drain Current - IMLT65R015M2HXTMA1
This MOSFET is a high-voltage N‑channel enhancement device designed for demanding power‑switching roles. It operates across a wide temperature range and is supplied in a Compact surface‑mount package suitable for dense electronic assemblies. The device delivers substantial power‑handling capability while conforming to RoHS environmental limits.
Features and Benefits:
• 18mΩ on‑resistance reduces conduction losses
• 600W power dissipation supports heavy‑load switching
• 142A continuous drain current enables high‑current applications
• 650V drain‑source rating allows high‑voltage operation
• 23V gate‑source limit provides gate overvoltage protection
• 600W power dissipation supports heavy‑load switching
• 142A continuous drain current enables high‑current applications
• 650V drain‑source rating allows high‑voltage operation
• 23V gate‑source limit provides gate overvoltage protection
Applications
• Suitable for high‑voltage power converters
• Ideal for industrial motor drive stages
• Used for DC‑DC and PFC circuits
• Can be used for renewable‑energy inverters
• Suitable for high‑current switching modules
• Ideal for industrial motor drive stages
• Used for DC‑DC and PFC circuits
• Can be used for renewable‑energy inverters
• Suitable for high‑current switching modules
What package type does it use for PCB assembly?
It is supplied in a PG‑HDSOP‑16 surface‑mount package suitable for automated placement.
What thermal environment can it withstand?
It operates between -55°C and 175°C for broad‑temperature deployments.
How does its gate charge affect switching performance?
The typical gate charge is 148nC, which influences drive requirements and switching losses during transitions.
Is it suitable for automotive qualification?
It is not specified as automotive‑standard compliant but meets RoHS environmental restrictions.
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