Microchip VP3203 Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin TO-92 VP3203N3-G
- RS Stock No.:
- 332-980
- Mfr. Part No.:
- VP3203N3-G
- Manufacturer:
- Microchip
Subtotal (1 bag of 1000 units)*
TWD92,900.00
(exc. GST)
TWD97,540.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- Shipping from November 23, 2026
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | TWD92.90 | TWD92,900.00 |
*price indicative
- RS Stock No.:
- 332-980
- Mfr. Part No.:
- VP3203N3-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-92 | |
| Series | VP3203 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-92 | ||
Series VP3203 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source to drain diode
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