Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -32 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC750P10LMATMA1
- RS Stock No.:
- 285-055
- Mfr. Part No.:
- ISC750P10LMATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD396.00
(exc. GST)
TWD415.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 13, 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD79.20 | TWD396.00 |
| 50 - 95 | TWD75.40 | TWD377.00 |
| 100 - 495 | TWD69.80 | TWD349.00 |
| 500 - 995 | TWD64.20 | TWD321.00 |
| 1000 + | TWD61.80 | TWD309.00 |
*price indicative
- RS Stock No.:
- 285-055
- Mfr. Part No.:
- ISC750P10LMATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -32A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS Power Transistor | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -32A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS Power Transistor | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is a Advanced power MOSFET is designed for optimal efficiency and versatility in industrial applications. Featuring a robust P channel configuration, it delivers exceptionally low on resistance and can handle high drain current, making it suitable for a range of demanding electronic circuits. The incorporation of logic level gate drive means it seamlessly operates within low voltage systems. With its excellent thermal performance and reliable avalanche ratings, this power transistor is Ideal for applications that require durability and reliability under continuous strain. Its RoHS compliance and halogen free lead plating further enhance its suitability for environmentally conscious designs, providing manufacturers peace of mind in a competitive market.
Exceptional switching performance for power management
100% avalanche tested for reliability
Low thermal resistance for effective heat dissipation
Logic level drive for easy microcontroller Interface
Pb free lead plating for environmental compliance
Consistent performance across a wide temperature range
Optimised for high speed applications
Supports high Pulse current ratings
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