Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -59 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC240P06LMATMA1
- RS Stock No.:
- 285-053
- Mfr. Part No.:
- ISC240P06LMATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD378.00
(exc. GST)
TWD396.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 13, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD75.60 | TWD378.00 |
| 50 - 95 | TWD71.80 | TWD359.00 |
| 100 - 495 | TWD66.60 | TWD333.00 |
| 500 - 995 | TWD61.20 | TWD306.00 |
| 1000 + | TWD59.00 | TWD295.00 |
*price indicative
- RS Stock No.:
- 285-053
- Mfr. Part No.:
- ISC240P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -59A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -59A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is a cutting edge P Channel MOSFET designed to deliver exceptional performance in power management applications. Featuring a voltage rating of 60V, it excels in both high efficiency and low on resistance characteristics, ensuring minimal power loss during operation. Its robust design is 100% avalanche tested, providing peace of mind for engineers looking for reliable solutions in demanding environments. The transistor operates at logic level, making it suitable for a variety of control scenarios in industrial applications.
Injection moulded for thermal management
Validated to JEDEC standards for reliability
RoHS compliant for environmental adherence
Halogen free materials for sustainability
Optimised for high speed switching efficiency
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