Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- RS Stock No.:
- 284-939
- Mfr. Part No.:
- IQDH29NE2LM5CGATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 5000 units)*
TWD416,500.00
(exc. GST)
TWD437,300.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 06, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | TWD83.30 | TWD416,500.00 |
*price indicative
- RS Stock No.:
- 284-939
- Mfr. Part No.:
- IQDH29NE2LM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 Power Transistor is engineered to deliver exceptional performance in various industrial applications. This cutting edge N channel transistor operates at a maximum voltage of 25V, offering impressive low on resistance and enhanced thermal management. Its impressive 789A continuous drain current capability allows it to perform efficiently even under rigorous conditions. Built to be reliable, it is fully qualified according to JEDEC standards ensuring longevity and endurance in everyday use.
Advanced thermal resistance for longevity
Zero gate voltage drain current minimizes energy waste
Robust avalanche energy handling for reliability
Pb free and RoHS compliant for eco friendliness
Optimized for logic level applications
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