Infineon CoolSiC 2000 V SiC Trench MOSFET N-Channel MOSFET, 89 A, 2 kV Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS Stock No.:
- 284-864
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD4,558.00
(exc. GST)
TWD4,785.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 29 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | TWD4,558.00 |
| 10 + | TWD4,103.00 |
*price indicative
- RS Stock No.:
- 284-864
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 2kV | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 576W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 2kV | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 576W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon CoolSiC 2000 V SiC Trench MOSFET Series MOSFET, 2000V Maximum Drain Source Voltage, 89A Maximum Continuous Drain Current - IMYH200R024M1HXKSA1
This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding power-electronic environments. It operates as an N-channel enhancement device and is supplied in a through-hole PG-TO-247-4 package that facilitates robust mounting and heat removal in industrial assemblies. The component is intended for applications requiring high blocking voltages and sustained current handling across a wide temperature range.
Features and Benefits:
• 2000V drain-source withstand for high-voltage systems
• 89A continuous drain current for heavy-load operation
• 35mΩ Rds(on) to minimise conduction losses
• 576W maximum power dissipation for thermal endurance
• 137nC typical gate charge at Vgs to inform drive sizing
• Operates from -55°C to 175°C for extended temperature margins
• 89A continuous drain current for heavy-load operation
• 35mΩ Rds(on) to minimise conduction losses
• 576W maximum power dissipation for thermal endurance
• 137nC typical gate charge at Vgs to inform drive sizing
• Operates from -55°C to 175°C for extended temperature margins
Applications
• Suitable for traction inverter high-voltage stages
• Ideal for utility-scale power conversion equipment
• Used with high-voltage DC-DC converter modules
• Can be used for industrial motor drives and controllers
• Suitable for solid-state circuit breaker designs
• Ideal for utility-scale power conversion equipment
• Used with high-voltage DC-DC converter modules
• Can be used for industrial motor drives and controllers
• Suitable for solid-state circuit breaker designs
What mounting format does it require for assembly?
It is supplied in a PG-TO-247-4 through-hole package requiring a compatible heatsink and secured mounting to achieve specified power dissipation.
What gate drive limitations should be observed?
The maximum gate-to-source voltage is 20V so gate drivers must limit Vgs to that value to avoid damage.
How does the device behave thermally at high load?
The transistor can dissipate up to 576W under appropriate cooling
thermal management must be designed to maintain junction temperatures within operating limits.
Is it suitable for automotive-grade projects?
It is not specified to meet automotive standards and should not be selected where automotive qualification is required.
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