Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- RS Stock No.:
- 284-688
- Mfr. Part No.:
- IPT017N12NM6ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 2000 units)*
TWD353,000.00
(exc. GST)
TWD370,640.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | TWD176.50 | TWD353,000.00 |
*price indicative
- RS Stock No.:
- 284-688
- Mfr. Part No.:
- IPT017N12NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-HSOF-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-HSOF-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon MOSFET features an OptiMOS 6 power transistor sets a new Benchmark for performance in the semiconductor industry. Engineered for high efficiency and exceptional thermal management, this product excels in demanding applications. With a robust design that supports 120V, it is tailored for high frequency switching, offering reliability and speed without compromising on energy efficiency. The N channel MOSFET integrates very low on resistance and minimal gate charge, making it an Ideal solution for power conversion and control in industrial settings. Its Advanced engineering ensures compliance with RoHS and other environmental standards, making it both a sustainable and performance driven choice for modern electronics.
Optimised for high frequency performance
Excellent thermal efficiency for reliability
Low on resistance reduces energy losses
Fast gate charge for swift operations
Qualified for industrial performance
Environmentally compliant for sustainability
Handles high avalanche energy safely
Wide operating temperature range
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