onsemi NTM Type N-Channel MOSFET, 198 A, 60 V Enhancement, 10-Pin TCPAK57 NTMJST1D4N06CLTXG
- RS Stock No.:
- 277-047
- Mfr. Part No.:
- NTMJST1D4N06CLTXG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 5 units)*
TWD296.00
(exc. GST)
TWD310.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 3,000 unit(s) shipping from January 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD59.20 | TWD296.00 |
| 50 - 95 | TWD56.40 | TWD282.00 |
| 100 - 495 | TWD52.20 | TWD261.00 |
| 500 - 995 | TWD48.00 | TWD240.00 |
| 1000 + | TWD46.20 | TWD231.00 |
*price indicative
- RS Stock No.:
- 277-047
- Mfr. Part No.:
- NTMJST1D4N06CLTXG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTM | |
| Package Type | TCPAK57 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 1.49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 116W | |
| Typical Gate Charge Qg @ Vgs | 92.2nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 7.5 mm | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTM | ||
Package Type TCPAK57 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 1.49mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 116W | ||
Typical Gate Charge Qg @ Vgs 92.2nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 7.5 mm | ||
Length 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor MOSFET is a power, single N-channel transistor with a 60V rating, 1.49mΩ on-resistance, and 198A current capacity. Its compact TCPAK57 5x7mm package ensures efficient thermal performance, making it ideal for power management, motor control, and DC-DC conversion applications.
Optimized top cool package to dissipate heat from top
Small footprint for compact designs
Ultra Low RDS(on) to improve system efficiency
Device is Pb Free and RoHS compliant
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