onsemi NTH Type N-Channel MOSFET, 140 A, 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- RS Stock No.:
- 277-041
- Mfr. Part No.:
- NTH4L018N075SC1
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD793.00
(exc. GST)
TWD832.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 22, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD793.00 |
| 10 - 99 | TWD713.00 |
| 100 + | TWD658.00 |
*price indicative
- RS Stock No.:
- 277-041
- Mfr. Part No.:
- NTH4L018N075SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 262nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 262nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
Related links
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247 NTHL015N065SC1
- onsemi NTH Type N-Channel MOSFET 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S
- onsemi NTH Type N-Channel MOSFET 650 V N, 3-Pin TO-247-4L NTHL032N065M3S