ROHM HP8 2 Type P, Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSOP-8 HP8MC5TB1
- RS Stock No.:
- 264-761
- Mfr. Part No.:
- HP8MC5TB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD280.00
(exc. GST)
TWD294.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD28.00 | TWD280.00 |
| 100 - 240 | TWD26.60 | TWD266.00 |
| 250 - 490 | TWD24.60 | TWD246.00 |
| 500 - 990 | TWD22.70 | TWD227.00 |
| 1000 + | TWD21.80 | TWD218.00 |
*price indicative
- RS Stock No.:
- 264-761
- Mfr. Part No.:
- HP8MC5TB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSOP-8 | |
| Series | HP8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 96mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 20W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSOP-8 | ||
Series HP8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 96mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 20W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 60V 12A Dual Nch+Pch is a low on-resistance MOSFET ideal for switching applications.
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
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