ROHM SCT4045 Type N-Channel MOSFET, 31 A, 31 V Enhancement, 5-Pin TO-263-7LA SCT4045DWAHRTL
- RS Stock No.:
- 264-590
- Mfr. Part No.:
- SCT4045DWAHRTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 5 units)*
TWD1,613.00
(exc. GST)
TWD1,693.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD322.60 | TWD1,613.00 |
| 50 - 95 | TWD306.40 | TWD1,532.00 |
| 100 + | TWD283.80 | TWD1,419.00 |
*price indicative
- RS Stock No.:
- 264-590
- Mfr. Part No.:
- SCT4045DWAHRTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 31V | |
| Series | SCT4045 | |
| Package Type | TO-263-7LA | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 59mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 93W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | ±21 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 31V | ||
Series SCT4045 | ||
Package Type TO-263-7LA | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 59mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 93W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs ±21 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The ROHM 750V 31A silicon carbide SiC trench MOSFET in a 7-pin SMD package offers high voltage resistance, low on-resistance, and fast switching speed.
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating and RoHS compliant
Wide creep age distance equal to min. 4.7mm
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