onsemi NTMFS3 Type N-Channel MOSFET, 135 A, 80 V Enhancement, 5-Pin DFN-5 NTMFS3D5N08XT1G
- RS Stock No.:
- 220-551
- Mfr. Part No.:
- NTMFS3D5N08XT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
TWD180.00
(exc. GST)
TWD189.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD36.00 | TWD180.00 |
| 50 - 95 | TWD34.20 | TWD171.00 |
| 100 - 495 | TWD31.80 | TWD159.00 |
| 500 - 995 | TWD29.00 | TWD145.00 |
| 1000 + | TWD28.20 | TWD141.00 |
*price indicative
- RS Stock No.:
- 220-551
- Mfr. Part No.:
- NTMFS3D5N08XT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN-5 | |
| Series | NTMFS3 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 119W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN-5 | ||
Series NTMFS3 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 119W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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