Nexperia PSM Type N-Channel MOSFET, 210 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R9-100SSEJ
- RS Stock No.:
- 219-452
- Mfr. Part No.:
- PSMN2R9-100SSEJ
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 1 unit)*
TWD183.00
(exc. GST)
TWD192.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 2,000 unit(s), ready to ship from another location
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD183.00 |
| 10 - 99 | TWD165.00 |
| 100 - 499 | TWD152.00 |
| 500 - 999 | TWD141.00 |
| 1000 + | TWD114.00 |
*price indicative
- RS Stock No.:
- 219-452
- Mfr. Part No.:
- PSMN2R9-100SSEJ
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 341W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 341W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.
SOA for superior linear mode operation
LFPAK88 package for applications that demand the highest performance
Related links
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN2R3-100SSEJ
- Nexperia PSM Type N-Channel MOSFET 80 V Enhancement, 5-Pin LFPAK PSMN2R6-80YSFX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN3R9-100YSFX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN075-100MSEX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN2R6-100SSFJ
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN7R2-100YSFX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN3R3-100SSFJ
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN2R0-100SSFJ