Nexperia PSM Type N-Channel MOSFET, 200 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R6-100SSFJ

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Subtotal (1 tape of 1 unit)*

TWD163.00

(exc. GST)

TWD171.15

(inc. GST)

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Packaging Options:
RS Stock No.:
219-459
Mfr. Part No.:
PSMN2R6-100SSFJ
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Operating Temperature

175°C

Length

8mm

Standards/Approvals

RoHS

Width

8 mm

Height

1.6mm

Automotive Standard

No

COO (Country of Origin):
MY
The Nexperia N-Channel MOSFET is qualified for operation up to 175°C and is ideal for industrial and consumer applications. Key applications include synchronous rectification in AC-DC and DC-DC converters, primary side switching, BLDC motor control, full-bridge and half-bridge circuits, and battery protection.

Strong avalanche energy rating

Avalanche rated and 100% tested

Ha free and RoHS compliant

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