Nexperia PSM Type N-Channel MOSFET, 70 A, 30 V Enhancement, 5-Pin LFPAK PSMN2R4-30MLDX
- RS Stock No.:
- 219-323
- Mfr. Part No.:
- PSMN2R4-30MLDX
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
TWD46.00
(exc. GST)
TWD48.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 10, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD46.00 |
| 10 - 99 | TWD42.00 |
| 100 - 499 | TWD39.00 |
| 500 - 999 | TWD35.00 |
| 1000 + | TWD32.00 |
*price indicative
- RS Stock No.:
- 219-323
- Mfr. Part No.:
- PSMN2R4-30MLDX
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 91W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 91W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Qualified to 175 °C
Superfast switching with soft recovery
Related links
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN2R4-30MLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN2R4-30YLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN6R4-30MLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN7R5-30MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN3R5-25MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN5R4-25YLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN6R0-25YLDX