STMicroelectronics SuperMESH N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z

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Subtotal 200 units (supplied on a reel)*

TWD4,660.00

(exc. GST)

TWD4,892.00

(inc. GST)

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Units
Per unit
200 - 480TWD23.30
500 - 980TWD21.60
1000 - 1980TWD19.90
2000 +TWD19.10

*price indicative

Packaging Options:
RS Stock No.:
151-928P
Mfr. Part No.:
STN1NK60Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

4.9nC

Maximum Operating Temperature

150°C

Width

3.7mm

Standards/Approvals

RoHS

Height

1.8mm

Length

6.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

SD improved capability

Zener protected

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