STMicroelectronics SuperMESH Type N-Channel MOSFET, 85 A, 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z

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TWD275.00

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TWD288.80

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Per Tape*
10 - 90TWD27.50TWD275.00
100 - 240TWD26.20TWD262.00
250 - 490TWD24.20TWD242.00
500 - 990TWD22.30TWD223.00
1000 +TWD21.50TWD215.00

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Packaging Options:
RS Stock No.:
151-902
Mfr. Part No.:
STD2NK100Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

1000V

Series

SuperMESH

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

8.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

16nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

159°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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