STMicroelectronics SuperMESH Dual N-Channel MOSFET, 400 mA, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

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Subtotal 100 units (supplied on a continuous strip)*

TWD5,610.00

(exc. GST)

TWD5,890.00

(inc. GST)

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Last RS stock
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Units
Per unit
100 - 240TWD56.10
250 - 490TWD51.70
500 - 990TWD47.60
1000 +TWD45.80

*price indicative

Packaging Options:
RS Stock No.:
151-447P
Mfr. Part No.:
STS1DNC45
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400mA

Maximum Drain Source Voltage Vds

450V

Package Type

SO-8

Series

SuperMESH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

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