N-Channel MOSFET, 3.3 A, 100 V, 3-Pin SOT-223 onsemi FDT86113LZ
- RS Stock No.:
- 759-9715P
- Mfr. Part No.:
- FDT86113LZ
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 05/06/2024, delivery within 6 working days
Added
Price (VAT excluded) Each (Supplied on a Reel) Quantities below 150 on continuous strip
TWD24.00
(exc. GST)
TWD25.20
(inc. GST)
| Units | Per unit |
| 1000 - 1995 | TWD24.00 |
| 2000 + | TWD23.80 |
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 759-9715P
- Mfr. Part No.:
- FDT86113LZ
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.3 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-223 |
| Series | PowerTrench |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 189 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.7mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V |
| Transistor Material | Si |
| Length | 3.7mm |
| Height | 1.7mm |
| Minimum Operating Temperature | -55 °C |