N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

RS Stock No.:: 541-1146
Mfr. Part No.:: IRFBG30PBF
Manufacturer:: Vishay

N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

Price (VAT excluded) Each

TWD72.00

(exc. GST)

TWD75.60

(inc. GST)

133 In stock for delivery within 6 working days

Units	Per unit
1 - 12	TWD72.00
13 - 24	TWD70.00
25 +	TWD68.00

RS Stock No.:: 541-1146
Mfr. Part No.:: IRFBG30PBF
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.1 A
Maximum Drain Source Voltage	1000 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	4.7mm
Transistor Material	Si
Typical Gate Charge @ Vgs	80 nC @ 10 V
Number of Elements per Chip	1
Length	10.41mm
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor