Semikron Danfoss SKM300GB125D, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin SEMITRANS, Panel

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Subtotal (1 unit)*

TWD18,463.00

(exc. GST)

TWD19,386.15

(inc. GST)

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Temporarily out of stock
  • 55 unit(s) shipping from March 11, 2026
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Units
Per unit
1 - 1TWD18,463.00
2 - 4TWD18,005.00
5 - 9TWD17,558.00
10 - 19TWD17,119.00
20 +TWD16,699.00

*price indicative

RS Stock No.:
468-2498
Mfr. Part No.:
SKM300GB125D
Manufacturer:
Semikron Danfoss
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Brand

Semikron Danfoss

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

300A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Collector Emitter Saturation Voltage VceSAT

3.85V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-40°C

Series

SKM300GB125D

Standards/Approvals

No

Length

106.4mm

Height

30.5mm

Width

61.4 mm

Automotive Standard

No

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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