Semikron Danfoss SKM75GB12V, Type N-Channel IGBT Module, 114 A 1200 V, 7-Pin SEMITRANS, Panel

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Subtotal (1 unit)*

TWD3,276.00

(exc. GST)

TWD3,439.80

(inc. GST)

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  • 13 unit(s) shipping from March 18, 2026
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Units
Per unit
1 - 1TWD3,276.00
2 - 4TWD3,179.00
5 - 7TWD3,079.00
8 - 15TWD3,017.00
16 +TWD2,926.00

*price indicative

RS Stock No.:
905-6156
Mfr. Part No.:
SKM75GB12V
Manufacturer:
Semikron Danfoss
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Brand

Semikron Danfoss

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

114A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

175°C

Maximum Operating Temperature

-40°C

Series

SKM75GB12V

Width

34 mm

Length

94mm

Height

30.1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
SK

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Supplied with

Mounting hardware

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