Infineon IHW30N110R5XKSA1 IGBT, 30 A 1100 V, 3-Pin TO-247
- RS Stock No.:
- 260-1052
- Mfr. Part No.:
- IHW30N110R5XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 unit)*
TWD113.00
(exc. GST)
TWD118.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 135 unit(s) shipping from June 01, 2026
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Units | Per unit |
|---|---|
| 1 - 9 | TWD113.00 |
| 10 - 39 | TWD102.00 |
| 40 - 79 | TWD93.00 |
| 80 - 119 | TWD84.00 |
| 120 + | TWD75.00 |
*price indicative
- RS Stock No.:
- 260-1052
- Mfr. Part No.:
- IHW30N110R5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1100V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Switching Speed | 60kHz | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1100V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Switching Speed 60kHz | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Height 41.42mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon IGBTs is a package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using single-ended resonant topology. It consist of a best product performances and high compatibility.
Lowest power dissipation
Better thermal management for higher reliability
Optimized for switching frequency
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