Infineon IKWH30N65WR6XKSA1, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6738
- Mfr. Part No.:
- IKWH30N65WR6XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD177.00
(exc. GST)
TWD185.84
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 70 unit(s) shipping from March 05, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD88.50 | TWD177.00 |
| 10 - 18 | TWD86.00 | TWD172.00 |
| 20 - 28 | TWD84.50 | TWD169.00 |
| 30 + | TWD81.50 | TWD163.00 |
*price indicative
- RS Stock No.:
- 232-6738
- Mfr. Part No.:
- IKWH30N65WR6XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 165W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Length | 21.1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.21mm | |
| Series | IKWH30N65WR6 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 165W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Length 21.1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.21mm | ||
Series IKWH30N65WR6 | ||
Automotive Standard No | ||
The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
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