Infineon IGBT Module, 50 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 249-6940
- Mfr. Part No.:
- IKW50N65RH5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD4,077.00
(exc. GST)
TWD4,281.00
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD135.90 | TWD4,077.00 |
| 60 - 60 | TWD133.20 | TWD3,996.00 |
| 90 + | TWD130.50 | TWD3,915.00 |
*price indicative
- RS Stock No.:
- 249-6940
- Mfr. Part No.:
- IKW50N65RH5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Width | 16.3 mm | |
| Series | IKW50N65RH5 | |
| Standards/Approvals | JEDEC | |
| Length | 41.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Width 16.3 mm | ||
Series IKW50N65RH5 | ||
Standards/Approvals JEDEC | ||
Length 41.9mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
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