Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
- RS Stock No.:
- 249-6938
- Mfr. Part No.:
- IKW40N65RH5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD3,330.00
(exc. GST)
TWD3,496.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 17, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD111.00 | TWD3,330.00 |
| 60 - 60 | TWD99.90 | TWD2,997.00 |
| 90 + | TWD96.90 | TWD2,907.00 |
*price indicative
- RS Stock No.:
- 249-6938
- Mfr. Part No.:
- IKW40N65RH5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 15V | |
| Maximum Power Dissipation | 250 W | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | PG-TO247-3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 15V | ||
Maximum Power Dissipation 250 W | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type PG-TO247-3 | ||
The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.
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