onsemi NXH40B120MNQ1SNG IGBT Module, Surface

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Bulk discount available

Subtotal (1 unit)*

TWD3,334.00

(exc. GST)

TWD3,500.70

(inc. GST)

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Last RS stock
  • Final 21 unit(s), ready to ship from another location
Units
Per unit
1 - 2TWD3,334.00
3 +TWD3,332.00

*price indicative

Packaging Options:
RS Stock No.:
245-6984
Mfr. Part No.:
NXH40B120MNQ1SNG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Power Dissipation Pd

156W

Number of Transistors

3

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

NXH40B120MNQ1SNG

Length

55.2mm

Width

32.8 mm

Standards/Approvals

RoHS

Height

13.9mm

Automotive Standard

No

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC


The ON Semiconductor NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

40 m/1200 V SiC MOSFET Half−Bridge

Thermistor

Options with Pre Applied Thermal Interface Material and without Pre Applied TIM

Press Fit Pins

These Devices are Pb Free, Halide Free and are RoHS Compliant

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