onsemi IGBT Module 1000 V Q2PACK, Surface

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Bulk discount available

Subtotal (1 tray of 36 units)*

TWD204,282.00

(exc. GST)

TWD214,495.92

(inc. GST)

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Units
Per unit
Per Tray*
36 - 36TWD5,674.50TWD204,282.00
72 +TWD5,504.30TWD198,154.80

*price indicative

RS Stock No.:
245-6973
Mfr. Part No.:
NXH350N100H4Q2F2P1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

592W

Number of Transistors

4

Package Type

Q2PACK

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

47.3 mm

Height

12.3mm

Length

93.1mm

Series

NXH350N100H4Q2F2P1G

Automotive Standard

No

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins


The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free and are RoHS Compliant

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