onsemi IGBT Module, Surface
- RS Stock No.:
- 245-6983
- Mfr. Part No.:
- NXH40B120MNQ1SNG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tray of 21 units)*
TWD69,997.20
(exc. GST)
TWD73,497.06
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 21 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 21 - 21 | TWD3,333.20 | TWD69,997.20 |
| 42 + | TWD3,266.60 | TWD68,598.60 |
*price indicative
- RS Stock No.:
- 245-6983
- Mfr. Part No.:
- NXH40B120MNQ1SNG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Power Dissipation Pd | 156W | |
| Number of Transistors | 3 | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | NXH40B120MNQ1SNG | |
| Standards/Approvals | RoHS | |
| Width | 32.8 mm | |
| Height | 13.9mm | |
| Length | 55.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Power Dissipation Pd 156W | ||
Number of Transistors 3 | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series NXH40B120MNQ1SNG | ||
Standards/Approvals RoHS | ||
Width 32.8 mm | ||
Height 13.9mm | ||
Length 55.2mm | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC
The ON Semiconductor NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
40 m/1200 V SiC MOSFET Half−Bridge
Thermistor
Options with Pre Applied Thermal Interface Material and without Pre Applied TIM
Press Fit Pins
These Devices are Pb Free, Halide Free and are RoHS Compliant
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