MPN

onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface

Name: onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface
Brand: onsemi
SKU: 245-6968
Price: 5733.84 TWD
Availability: InStock

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tray of 36 units)*

TWD196,588.80

(exc. GST)

TWD206,418.24

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tray*
36 - 36	TWD5,460.80	TWD196,588.80
72 +	TWD5,351.60	TWD192,657.60

*price indicative

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1000V
	Maximum Power Dissipation Pd	79W
	Number of Transistors	6
	Package Type	Q2BOOST-PIM53
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Series	NXH300B100H4Q2F2PG
	Standards/Approvals	RoHS
	Height	17.7mm
	Length	93.1mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1000V
	Maximum Power Dissipation Pd 79W
	Number of Transistors 6
	Package Type Q2BOOST-PIM53
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Series NXH300B100H4Q2F2PG
	Standards/Approvals RoHS
	Height 17.7mm
	Length 93.1mm
	Automotive Standard No

The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.

Extremely Efficient Trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

3 channel in Q2BOOST package

These are Pb free device

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