Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1000V
	Number of Transistors	2
	Maximum Power Dissipation Pd	79W
	Package Type	Q2BOOST - Case 180BR
	Mount Type	Surface
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Height	12.3mm
	Standards/Approvals	RoHS
	Series	NXH450B100H4Q2F2SG
	Width	47.3 mm
	Length	93.1mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1000V
	Number of Transistors 2
	Maximum Power Dissipation Pd 79W
	Package Type Q2BOOST - Case 180BR
	Mount Type Surface
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Height 12.3mm
	Standards/Approvals RoHS
	Series NXH450B100H4Q2F2SG
	Width 47.3 mm
	Length 93.1mm
	Automotive Standard No

Datasheet - NXH450B100H4Q2F2SG

The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

Silicon or SiC Hybrid technology maximizes power density

Low switching loss reduces system power dissipation

Low inductive layout

Press fit and solder pin options

This Device is Pb free, Halogen Free and is RoHS Compliant

onsemi NXH450B100H4Q2F2SG IGBT Module 1000 V Q2BOOST - Case 180BR, Surface

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