Infineon IGBT Module, 200 A 1200 V EconoPACKTM3

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Subtotal (1 tray of 10 units)*

TWD43,462.00

(exc. GST)

TWD45,635.10

(inc. GST)

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Temporarily out of stock
  • 10 unit(s) shipping from June 18, 2026
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Units
Per unit
Per Tray*
10 - 10TWD4,346.20TWD43,462.00
20 +TWD4,259.30TWD42,593.00

*price indicative

RS Stock No.:
244-5403
Mfr. Part No.:
FS150R12KT3BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

200A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

700W

Number of Transistors

6

Package Type

EconoPACKTM3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

FS150R12KT3

Automotive Standard

No

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA

Temperature under switching conditions 125° C

Gate-emitter leakage current 400 nA

Reverse transfer capacitance 0.40 nF

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