Infineon FS150R12PT4BOSA1 IGBT Module, 200 A 1200 V Module, Panel

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Subtotal (1 tray of 6 units)*

TWD31,414.80

(exc. GST)

TWD32,985.54

(inc. GST)

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  • 6 unit(s) ready to ship from another location
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Units
Per unit
Per Tray*
6 - 6TWD5,235.80TWD31,414.80
12 +TWD5,131.20TWD30,787.20

*price indicative

RS Stock No.:
273-7404
Mfr. Part No.:
FS150R12PT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

680W

Package Type

Module

Mount Type

Panel

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61140, ULapproved(E83335), EN61140

Height

20.5mm

Width

87 mm

Length

130mm

Automotive Standard

No

The Infineon IGBT module has VCEsat with positive temperature coefficient. This GBT module has 1200V collector emitter voltage and 150A continuous DC collector current. This IGBT module used for high power converters, motor drives and UPS system application.

Low VCEsat

Standard housing

Isolated base plate

Low switching losses

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