Vishay SUD08P06-155L-GE3 IGBT

The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 52mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 20.8W. It can be used in load switches for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

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