onsemi FGH40T120SQDNL4, Type P-Channel IGBT, 40 A 1.2 kV, 4-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

TWD6,024.00

(exc. GST)

TWD6,325.20

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30TWD200.80TWD6,024.00
60 - 90TWD196.50TWD5,895.00
120 +TWD192.10TWD5,763.00

*price indicative

RS Stock No.:
178-4321
Mfr. Part No.:
FGH40T120SQDNL4
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1.2kV

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

4

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.78V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop

Automotive Standard

No

COO (Country of Origin):
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices

Applications

Solar inverter UPS Welding

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