onsemi FGH60T65SQD-F155, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

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Subtotal (1 tube of 30 units)*

TWD3,690.00

(exc. GST)

TWD3,874.50

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30TWD123.00TWD3,690.00
60 - 270TWD120.30TWD3,609.00
300 +TWD118.00TWD3,540.00

*price indicative

RS Stock No.:
178-4259
Mfr. Part No.:
FGH60T65SQD-F155
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

333W

Package Type

TO-247 G03

Mount Type

Through Hole

Channel Type

Type P

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop 4th Generation

Energy Rating

50mJ

Automotive Standard

No

COO (Country of Origin):
CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A

High Input Impedance

Fast Switching

Tighten Parameter Distribution

Applications

Solar Inverter, UPS, Welder, Telecom, ESS, PFC

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